On-wafer Passives De-Embedding Based on Open-pad and Transmission Line measurement

Abouzar Hamidipour; Martin Jahn; Florian Starzer; Xin Wang; Andreas Stelzer

doi:10.1109/BIPOL.2010.5667930

On-wafer Passives De-Embedding Based on Open-pad and Transmission Line measurement

Abouzar Hamidipour
, Martin Jahn
, Florian Starzer
, Xin Wang
, Andreas Stelzer

Institute for Communications Engineering and RF-Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Abstract

In this paper, a new de‑embedding technique based on open‑pad and Transmission Line (TL) measurement is discussed. This technique can be used as an efficient approach to characterize on‑chip passives in the millimeter wave range. Using open‑pad measurement, parallel parasitics are extracted and removed in the first step. Cross‑talk parasitics between two pads that are kept at a constant distance can be assumed constant, and thus both cross‑talk and parallel parasitics can be removed. Subsequently, the transfer function matrix of a singleended TL is used to de‑embed series parasitics from the measurement results. This calculation leads to a better extraction and removal of the series parasitics compared to using a conventional short dummy pattern. The measurement results are in a close agreement with the simulations up to 110 GHz.

Original language	English
Title of host publication	Proceedings of IEEE Bipolar BiCMOS Circuits and Technology Meeting
Editors	IEEE
Pages	102-105
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2010.5667930
Publication status	Published - Oct 2010

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Fields of science

202019 High frequency engineering
202037 Signal processing

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10.1109/BIPOL.2010.5667930

Cite this

Hamidipour, A., Jahn, M., Starzer, F., Wang, X., & Stelzer, A. (2010). On-wafer Passives De-Embedding Based on Open-pad and Transmission Line measurement. In IEEE (Ed.), Proceedings of IEEE Bipolar BiCMOS Circuits and Technology Meeting (pp. 102-105). Article 5667930 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2010.5667930

@inproceedings{71ac8f0a075e4d498b1a720479bedc6f,

title = "On-wafer Passives De-Embedding Based on Open-pad and Transmission Line measurement",

abstract = "In this paper, a new de‑embedding technique based on open‑pad and Transmission Line (TL) measurement is discussed. This technique can be used as an efficient approach to characterize on‑chip passives in the millimeter wave range. Using open‑pad measurement, parallel parasitics are extracted and removed in the first step. Cross‑talk parasitics between two pads that are kept at a constant distance can be assumed constant, and thus both cross‑talk and parallel parasitics can be removed. Subsequently, the transfer function matrix of a singleended TL is used to de‑embed series parasitics from the measurement results. This calculation leads to a better extraction and removal of the series parasitics compared to using a conventional short dummy pattern. The measurement results are in a close agreement with the simulations up to 110 GHz.",

author = "Abouzar Hamidipour and Martin Jahn and Florian Starzer and Xin Wang and Andreas Stelzer",

year = "2010",

month = oct,

doi = "10.1109/BIPOL.2010.5667930",

language = "English",

isbn = "978-1-4244-8578-9",

series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

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editor = "IEEE",

booktitle = "Proceedings of IEEE Bipolar BiCMOS Circuits and Technology Meeting",

}

On-wafer Passives De-Embedding Based on Open-pad and Transmission Line measurement. / Hamidipour, Abouzar; Jahn, Martin; Starzer, Florian et al.
Proceedings of IEEE Bipolar BiCMOS Circuits and Technology Meeting. ed. / IEEE. 2010. p. 102-105 5667930 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

TY - GEN

T1 - On-wafer Passives De-Embedding Based on Open-pad and Transmission Line measurement

AU - Hamidipour, Abouzar

AU - Jahn, Martin

AU - Starzer, Florian

AU - Wang, Xin

AU - Stelzer, Andreas

PY - 2010/10

Y1 - 2010/10

N2 - In this paper, a new de‑embedding technique based on open‑pad and Transmission Line (TL) measurement is discussed. This technique can be used as an efficient approach to characterize on‑chip passives in the millimeter wave range. Using open‑pad measurement, parallel parasitics are extracted and removed in the first step. Cross‑talk parasitics between two pads that are kept at a constant distance can be assumed constant, and thus both cross‑talk and parallel parasitics can be removed. Subsequently, the transfer function matrix of a singleended TL is used to de‑embed series parasitics from the measurement results. This calculation leads to a better extraction and removal of the series parasitics compared to using a conventional short dummy pattern. The measurement results are in a close agreement with the simulations up to 110 GHz.

AB - In this paper, a new de‑embedding technique based on open‑pad and Transmission Line (TL) measurement is discussed. This technique can be used as an efficient approach to characterize on‑chip passives in the millimeter wave range. Using open‑pad measurement, parallel parasitics are extracted and removed in the first step. Cross‑talk parasitics between two pads that are kept at a constant distance can be assumed constant, and thus both cross‑talk and parallel parasitics can be removed. Subsequently, the transfer function matrix of a singleended TL is used to de‑embed series parasitics from the measurement results. This calculation leads to a better extraction and removal of the series parasitics compared to using a conventional short dummy pattern. The measurement results are in a close agreement with the simulations up to 110 GHz.

UR - https://www.scopus.com/pages/publications/78651393040

U2 - 10.1109/BIPOL.2010.5667930

DO - 10.1109/BIPOL.2010.5667930

M3 - Conference proceedings

SN - 978-1-4244-8578-9

T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

SP - 102

EP - 105

BT - Proceedings of IEEE Bipolar BiCMOS Circuits and Technology Meeting

A2 - IEEE, null

ER -

On-wafer Passives De-Embedding Based on Open-pad and Transmission Line measurement

Abstract

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