Abstract
The growth of anodic oxide films on Al and Ta is determined by the electric field strength. A
simultaneous migration of anions (e.g. 0^2-) and cations (e.g. Al^3+) is necessary to prevent the
formation of uncompensated space charges, which would lower the local field strength and would
hinder further oxide growth. The formation of mobile ions is possible only at the interfaces and
their migration through requires some time, which depends on the local field strength.
Therefore, the movement of space charges and the local field strength are coupled by Poisson's
law. Result is a delayed oxide formation or overshoot, well-known from potentiostatic and
potential sweep experiments. Fundamentally, the film grows at both interfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 49-54 |
| Number of pages | 6 |
| Journal | Bulletin of the Chemists and Technologists of Macedonia |
| Volume | 13 |
| Publication status | Published - 1994 |
Fields of science
- 104005 Electrochemistry
- 104006 Solid state chemistry
- 104014 Surface chemistry
- 104017 Physical chemistry
- 105113 Crystallography
- 105116 Mineralogy
- 503013 Subject didactics of natural sciences
- 204 Chemical Process Engineering
- 204001 Inorganic chemical technology
- 205016 Materials testing
- 210006 Nanotechnology
- 211104 Metallurgy
JKU Focus areas
- Engineering and Natural Sciences (in general)