On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature

M. Lindstam; Mats Boman; Klaus Piglmayer

doi:10.1016/S0169-4332(00)00853-9

On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature

M. Lindstam
, Mats Boman
, Klaus Piglmayer

Institute of Applied Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	200-206
Number of pages	7
Journal	Applied Surface Science
Volume	172
Issue number	3-4
DOIs	https://doi.org/10.1016/S0169-4332(00)00853-9
Publication status	Published - 15 Mar 2001

Fields of science

103016 Laser physics
210005 Nanophotonics

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10.1016/S0169-4332(00)00853-9

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title = "On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature",

author = "M. Lindstam and Mats Boman and Klaus Piglmayer",

year = "2001",

month = mar,

day = "15",

doi = "10.1016/S0169-4332(00)00853-9",

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journal = "Applied Surface Science",

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T1 - On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature

AU - Lindstam, M.

AU - Boman, Mats

AU - Piglmayer, Klaus

PY - 2001/3/15

Y1 - 2001/3/15

UR - https://www.scopus.com/pages/publications/0034831955

U2 - 10.1016/S0169-4332(00)00853-9

DO - 10.1016/S0169-4332(00)00853-9

M3 - Article

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VL - 172

SP - 200

EP - 206

JO - Applied Surface Science

JF - Applied Surface Science

IS - 3-4

ER -

On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature

Fields of science

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