New Model of the Temperature Dependence of the 1.4 eV Emission Band of Amorphous Silicon

F. Boulitrop; D.J. Dunstan; A. Chenevas-Paule

doi:10.1103/PhysRevB.25.7860

New Model of the Temperature Dependence of the 1.4 eV Emission Band of Amorphous Silicon

F. Boulitrop
, D.J. Dunstan
, A. Chenevas-Paule

Institute of Applied Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	7860-7862
Number of pages	3
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	25
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.25.7860
Publication status	Published - 1982

Fields of science

103016 Laser physics
103020 Surface physics
103 Physics, Astronomy
103008 Experimental physics
103021 Optics
103023 Polymer physics

JKU Focus areas

Engineering and Natural Sciences (in general)

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10.1103/PhysRevB.25.7860

Cite this

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title = "New Model of the Temperature Dependence of the 1.4 eV Emission Band of Amorphous Silicon",

author = "F. Boulitrop and D.J. Dunstan and A. Chenevas-Paule",

year = "1982",

doi = "10.1103/PhysRevB.25.7860",

language = "English",

volume = "25",

pages = "7860--7862",

journal = "Physical Review B: Condensed Matter and Materials Physics",

issn = "2469-9969",

publisher = "The American Physical Society",

number = "12",

}

TY - JOUR

T1 - New Model of the Temperature Dependence of the 1.4 eV Emission Band of Amorphous Silicon

AU - Boulitrop, F.

AU - Dunstan, D.J.

AU - Chenevas-Paule, A.

PY - 1982

Y1 - 1982

UR - https://www.scopus.com/pages/publications/35949024325

U2 - 10.1103/PhysRevB.25.7860

DO - 10.1103/PhysRevB.25.7860

M3 - Article

SN - 2469-9969

VL - 25

SP - 7860

EP - 7862

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 12

ER -

New Model of the Temperature Dependence of the 1.4 eV Emission Band of Amorphous Silicon

Fields of science

JKU Focus areas

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