Nanoimprint lithography from CHARPAN Tool exposed master stamps with 12.5&#xa0;nm&#xa0;hp

Michael Mühlberger; M. Boehm; Iris Bergmair; M. Chouiki; R. Schoeftner; G. Kreindl; M. Kast; D. Treiblmayr; Thomas Glinsner; Ron Miller; Elmar Platzgummer; Hans Loeschner; P. Joechl; S. Eder-Kapl; T. Narzt; Elisabeth Lausecker; Thomas Fromherz

doi:10.1016/j.mee.2010.12.110

Nanoimprint lithography from CHARPAN Tool exposed master stamps with 12.5 nm hp

Michael Mühlberger, M. Boehm, Iris Bergmair, M. Chouiki, R. Schoeftner, G. Kreindl, M. Kast, D. Treiblmayr, Thomas Glinsner, Ron Miller, Elmar Platzgummer, Hans Loeschner, P. Joechl, S. Eder-Kapl, T. Narzt, Elisabeth Lausecker, Thomas Fromherz

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The use of working stamps for nanoimprint lithography is highly interesting due to a number of reasons. We present results of such a master stamp – working stamp – imprint process where we achieved a resolution of 12.5 nm half pitch. To fabricate master stamps for nanoimprint lithography we use massively parallel ion beam lithography provided by the CHARPAN Tool. Exposed and developed hydrogen silsesquioxane (HSQ) on Si is directly used as a master to fabricate working stamps from UV-curable polymers, which are then used for UV-based nanoimprint lithography.

Original language	English
Pages (from-to)	2070 - 2073
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	8
DOIs	https://doi.org/10.1016/j.mee.2010.12.110
Publication status	Published - 2011

Fields of science

103026 Quantum optics
103009 Solid state physics
103 Physics, Astronomy
103011 Semiconductor physics
202018 Semiconductor electronics
210006 Nanotechnology

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

Access to Document

10.1016/j.mee.2010.12.110

Cite this

Mühlberger, M., Boehm, M., Bergmair, I., Chouiki, M., Schoeftner, R., Kreindl, G., Kast, M., Treiblmayr, D., Glinsner, T., Miller, R., Platzgummer, E., Loeschner, H., Joechl, P., Eder-Kapl, S., Narzt, T., Lausecker, E., & Fromherz, T. (2011). Nanoimprint lithography from CHARPAN Tool exposed master stamps with 12.5 nm hp. Microelectronic Engineering, 88(8), 2070 - 2073. https://doi.org/10.1016/j.mee.2010.12.110

@article{37dd3dfa8c8f4333af324a3cb762b384,

title = "Nanoimprint lithography from CHARPAN Tool exposed master stamps with 12.5 nm hp",

abstract = "The use of working stamps for nanoimprint lithography is highly interesting due to a number of reasons. We present results of such a master stamp – working stamp – imprint process where we achieved a resolution of 12.5 nm half pitch. To fabricate master stamps for nanoimprint lithography we use massively parallel ion beam lithography provided by the CHARPAN Tool. Exposed and developed hydrogen silsesquioxane (HSQ) on Si is directly used as a master to fabricate working stamps from UV-curable polymers, which are then used for UV-based nanoimprint lithography.",

author = "Michael M{\"u}hlberger and M. Boehm and Iris Bergmair and M. Chouiki and R. Schoeftner and G. Kreindl and M. Kast and D. Treiblmayr and Thomas Glinsner and Ron Miller and Elmar Platzgummer and Hans Loeschner and P. Joechl and S. Eder-Kapl and T. Narzt and Elisabeth Lausecker and Thomas Fromherz",

year = "2011",

doi = "10.1016/j.mee.2010.12.110",

language = "English",

volume = "88",

pages = "2070 -- 2073",

journal = "Microelectronic Engineering",

issn = "1873-5568",

publisher = "ELSEVIER SCIENCE BV",

number = "8",

}

Mühlberger, M, Boehm, M, Bergmair, I, Chouiki, M, Schoeftner, R, Kreindl, G, Kast, M, Treiblmayr, D, Glinsner, T, Miller, R, Platzgummer, E, Loeschner, H, Joechl, P, Eder-Kapl, S, Narzt, T, Lausecker, E & Fromherz, T 2011, 'Nanoimprint lithography from CHARPAN Tool exposed master stamps with 12.5 nm hp', Microelectronic Engineering, vol. 88, no. 8, pp. 2070 - 2073. https://doi.org/10.1016/j.mee.2010.12.110

TY - JOUR

T1 - Nanoimprint lithography from CHARPAN Tool exposed master stamps with 12.5 nm hp

AU - Mühlberger, Michael

AU - Boehm, M.

AU - Bergmair, Iris

AU - Chouiki, M.

AU - Schoeftner, R.

AU - Kreindl, G.

AU - Kast, M.

AU - Treiblmayr, D.

AU - Glinsner, Thomas

AU - Miller, Ron

AU - Platzgummer, Elmar

AU - Loeschner, Hans

AU - Joechl, P.

AU - Eder-Kapl, S.

AU - Narzt, T.

AU - Lausecker, Elisabeth

AU - Fromherz, Thomas

PY - 2011

Y1 - 2011

N2 - The use of working stamps for nanoimprint lithography is highly interesting due to a number of reasons. We present results of such a master stamp – working stamp – imprint process where we achieved a resolution of 12.5 nm half pitch. To fabricate master stamps for nanoimprint lithography we use massively parallel ion beam lithography provided by the CHARPAN Tool. Exposed and developed hydrogen silsesquioxane (HSQ) on Si is directly used as a master to fabricate working stamps from UV-curable polymers, which are then used for UV-based nanoimprint lithography.

AB - The use of working stamps for nanoimprint lithography is highly interesting due to a number of reasons. We present results of such a master stamp – working stamp – imprint process where we achieved a resolution of 12.5 nm half pitch. To fabricate master stamps for nanoimprint lithography we use massively parallel ion beam lithography provided by the CHARPAN Tool. Exposed and developed hydrogen silsesquioxane (HSQ) on Si is directly used as a master to fabricate working stamps from UV-curable polymers, which are then used for UV-based nanoimprint lithography.

UR - http://www.sciencedirect.com/science/article/pii/S0167931710005988

U2 - 10.1016/j.mee.2010.12.110

DO - 10.1016/j.mee.2010.12.110

M3 - Article

SN - 1873-5568

VL - 88

SP - 2070

EP - 2073

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 8

ER -