Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits

Martyna Justyna Grydlik; Moritz Brehm; Friedrich Schäffler

doi:10.1186/1556-276X-7-601

Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits

Martyna Justyna Grydlik, Moritz Brehm, Friedrich Schäffler

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate the formation of Ge quantum dots in ring-like arrangements around predefined {111}-faceted pits in the Si(001) substrate. We report on the complex morphological evolution of the single quantum dots contributing to the rings by means of atomic force microscopy and demonstrate that by careful adjustment of the epitaxial growth parameters, such rings containing densely squeezed islands can be grown with large spatial distances of up to 5 μm without additional nucleation of randomly distributed quantum dots between the rings.

Original language	English
Article number	601
Pages (from-to)	1-6
Number of pages	6
Journal	Nanoscale Research Letters
Volume	7
DOIs	https://doi.org/10.1186/1556-276X-7-601
Publication status	Published - 2012

Fields of science

103026 Quantum optics
103009 Solid state physics
103 Physics, Astronomy
103011 Semiconductor physics
202018 Semiconductor electronics
210006 Nanotechnology

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

Access to Document

10.1186/1556-276X-7-601

Cite this

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title = "Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits",

abstract = "We demonstrate the formation of Ge quantum dots in ring-like arrangements around predefined {111}-faceted pits in the Si(001) substrate. We report on the complex morphological evolution of the single quantum dots contributing to the rings by means of atomic force microscopy and demonstrate that by careful adjustment of the epitaxial growth parameters, such rings containing densely squeezed islands can be grown with large spatial distances of up to 5 μm without additional nucleation of randomly distributed quantum dots between the rings.",

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AB - We demonstrate the formation of Ge quantum dots in ring-like arrangements around predefined {111}-faceted pits in the Si(001) substrate. We report on the complex morphological evolution of the single quantum dots contributing to the rings by means of atomic force microscopy and demonstrate that by careful adjustment of the epitaxial growth parameters, such rings containing densely squeezed islands can be grown with large spatial distances of up to 5 μm without additional nucleation of randomly distributed quantum dots between the rings.

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