Molecular beam epitaxy of ZnS on (001) GaAs using elemental sources

Gerhard Brunthaler; A. Forstner; C. Giftge; M. Lang; K. Lischka; M. von Ortenberg; D. Schikora; T. Widmer

doi:10.1088/0268-1242/9/12/011

Molecular beam epitaxy of ZnS on (001) GaAs using elemental sources

Gerhard Brunthaler
, A. Forstner
, C. Giftge
, M. Lang
, K. Lischka
, M. von Ortenberg
, D. Schikora
, T. Widmer

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	011
Pages (from-to)	2229-2232
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	9
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/9/12/011
Publication status	Published - 1994

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

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10.1088/0268-1242/9/12/011

Cite this

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title = "Molecular beam epitaxy of ZnS on (001) GaAs using elemental sources",

author = "Gerhard Brunthaler and A. Forstner and C. Giftge and M. Lang and K. Lischka and Ortenberg, \{M. von\} and D. Schikora and T. Widmer",

year = "1994",

doi = "10.1088/0268-1242/9/12/011",

language = "English",

volume = "9",

pages = "2229--2232",

journal = "Semiconductor Science and Technology",

publisher = "IOP Publishing",

number = "12",

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TY - JOUR

T1 - Molecular beam epitaxy of ZnS on (001) GaAs using elemental sources

AU - Brunthaler, Gerhard

AU - Forstner, A.

AU - Giftge, C.

AU - Lang, M.

AU - Lischka, K.

AU - Ortenberg, M. von

AU - Schikora, D.

AU - Widmer, T.

PY - 1994

Y1 - 1994

UR - https://www.scopus.com/pages/publications/0028706721

U2 - 10.1088/0268-1242/9/12/011

DO - 10.1088/0268-1242/9/12/011

M3 - Article

VL - 9

SP - 2229

EP - 2232

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

M1 - 011

ER -

Molecular beam epitaxy of ZnS on (001) GaAs using elemental sources

Fields of science

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