Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

Friedrich Schäffler, K. Lai, P. D. Ye, Michael Mühlberger, D.C. Tsui, S. Lyon, W. Pan

Research output: Working paper and reports › Preprint

Name	arXiv.org
ISSN (Print)	2331-8422

Fields of science

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric",

author = "Friedrich Sch{\"a}ffler and K. Lai and Ye, {P. D.} and Michael M{\"u}hlberger and D.C. Tsui and S. Lyon and W. Pan",

year = "2005",

doi = "10.48550/arXiv.cond-mat/0504484",

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AU - Schäffler, Friedrich

AU - Lai, K.

AU - Ye, P. D.

AU - Mühlberger, Michael

AU - Tsui, D.C.

AU - Lyon, S.

AU - Pan, W.

PY - 2005

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U2 - 10.48550/arXiv.cond-mat/0504484

DO - 10.48550/arXiv.cond-mat/0504484

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BT - Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

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