Misfit dislocation nucleation and multiplication in fully strained SiGe/Si heterostructures under thermal annealing

Friedrich Schäffler, T. Yugova, V. Vdovin, M. M. Rzaev

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	137-141
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	8
DOIs	https://doi.org/10.1016/j.mssp.2004.09.027
Publication status	Published - 2005

Fields of science

@article{43b285bb819c4de6b5d128f26a537354,

title = "Misfit dislocation nucleation and multiplication in fully strained SiGe/Si heterostructures under thermal annealing",

author = "Friedrich Sch{\"a}ffler and T. Yugova and V. Vdovin and Rzaev, {M. M.}",

year = "2005",

doi = "10.1016/j.mssp.2004.09.027",

language = "English",

volume = "8",

pages = "137--141",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}

TY - JOUR

T1 - Misfit dislocation nucleation and multiplication in fully strained SiGe/Si heterostructures under thermal annealing

AU - Schäffler, Friedrich

AU - Yugova, T.

AU - Vdovin, V.

AU - Rzaev, M. M.

PY - 2005

Y1 - 2005

U2 - 10.1016/j.mssp.2004.09.027

DO - 10.1016/j.mssp.2004.09.027

M3 - Article

SN - 1369-8001

VL - 8

SP - 137

EP - 141

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -