Mechanical strain and electrically active defects in Si implanted with Ge+ ions

Y. Suprun-Belevich, Leopold Palmetshofer, B. J. Sealy, N. Emerson

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	565–569
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	14
DOIs	https://doi.org/10.1088/0268-1242/14/6/313
Publication status	Published - 1999

Fields of science

@article{2c45c7f052ee4e588d388212f0d902fb,

title = "Mechanical strain and electrically active defects in Si implanted with Ge+ ions",

author = "Y. Suprun-Belevich and Leopold Palmetshofer and Sealy, \{B. J.\} and N. Emerson",

year = "1999",

doi = "10.1088/0268-1242/14/6/313",

language = "English",

volume = "14",

pages = "565–569",

journal = "Semiconductor Science and Technology",

publisher = "IOP Publishing",

}

TY - JOUR

T1 - Mechanical strain and electrically active defects in Si implanted with Ge+ ions

AU - Suprun-Belevich, Y.

AU - Palmetshofer, Leopold

AU - Sealy, B. J.

AU - Emerson, N.

PY - 1999

Y1 - 1999

U2 - 10.1088/0268-1242/14/6/313

DO - 10.1088/0268-1242/14/6/313

M3 - Article

VL - 14

SP - 565

EP - 569

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -