Low-temperature molecular beam epitaxy of Ge on Si

Friedrich Schäffler; J. P. Leitao; A. Fonseca; N. A. Sobolev; M. C. Carmo; N. Franco; Herbert Lichtenberger; T.M. Burbaev; V.A. Kurbatov; M. M. Rzaev; A. O. Pogosov; N. N. Sibel'din; V.A. Tsvetkov; A. D. Sequeira

doi:10.1016/j.mssp.2004.09.089

Low-temperature molecular beam epitaxy of Ge on Si

Friedrich Schäffler, J. P. Leitao, A. Fonseca, N. A. Sobolev, M. C. Carmo, N. Franco, Herbert Lichtenberger, T.M. Burbaev, V.A. Kurbatov, M. M. Rzaev, A. O. Pogosov, N. N. Sibel'din, V.A. Tsvetkov, A. D. Sequeira

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	35-39
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	8
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mssp.2004.09.089
Publication status	Published - Feb 2005

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

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Schäffler, F., Leitao, J. P., Fonseca, A., Sobolev, N. A., Carmo, M. C., Franco, N., Lichtenberger, H., Burbaev, T. M., Kurbatov, V. A., Rzaev, M. M., Pogosov, A. O., Sibel'din, N. N., Tsvetkov, V. A., & Sequeira, A. D. (2005). Low-temperature molecular beam epitaxy of Ge on Si. Materials Science in Semiconductor Processing, 8(1-3 SPEC. ISS.), 35-39. https://doi.org/10.1016/j.mssp.2004.09.089

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title = "Low-temperature molecular beam epitaxy of Ge on Si",

author = "Friedrich Sch{\"a}ffler and Leitao, \{J. P.\} and A. Fonseca and Sobolev, \{N. A.\} and Carmo, \{M. C.\} and N. Franco and Herbert Lichtenberger and T.M. Burbaev and V.A. Kurbatov and Rzaev, \{M. M.\} and Pogosov, \{A. O.\} and Sibel'din, \{N. N.\} and V.A. Tsvetkov and Sequeira, \{A. D.\}",

year = "2005",

month = feb,

doi = "10.1016/j.mssp.2004.09.089",

language = "English",

volume = "8",

pages = "35--39",

journal = "Materials Science in Semiconductor Processing",

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Schäffler, F, Leitao, JP, Fonseca, A, Sobolev, NA, Carmo, MC, Franco, N, Lichtenberger, H, Burbaev, TM, Kurbatov, VA, Rzaev, MM, Pogosov, AO, Sibel'din, NN, Tsvetkov, VA & Sequeira, AD 2005, 'Low-temperature molecular beam epitaxy of Ge on Si', Materials Science in Semiconductor Processing, vol. 8, no. 1-3 SPEC. ISS., pp. 35-39. https://doi.org/10.1016/j.mssp.2004.09.089

TY - JOUR

T1 - Low-temperature molecular beam epitaxy of Ge on Si

AU - Schäffler, Friedrich

AU - Leitao, J. P.

AU - Fonseca, A.

AU - Sobolev, N. A.

AU - Carmo, M. C.

AU - Franco, N.

AU - Lichtenberger, Herbert

AU - Burbaev, T.M.

AU - Kurbatov, V.A.

AU - Rzaev, M. M.

AU - Pogosov, A. O.

AU - Sibel'din, N. N.

AU - Tsvetkov, V.A.

AU - Sequeira, A. D.

PY - 2005/2

Y1 - 2005/2

UR - https://www.scopus.com/pages/publications/19944430351

U2 - 10.1016/j.mssp.2004.09.089

DO - 10.1016/j.mssp.2004.09.089

M3 - Article

SN - 1369-8001

VL - 8

SP - 35

EP - 39

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1-3 SPEC. ISS.

ER -

Low-temperature molecular beam epitaxy of Ge on Si

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