Low driving voltage and high mobility ambipolar field-effect transistors with PbS colloidal nanocrystals.

Satria Zulkarnaen Bisri; Claudia Piliego; Maksym Yarema; Wolfgang Johann Heiß; Maria Antonietta Loi

doi:10.1002/adma.201205041

Low driving voltage and high mobility ambipolar field-effect transistors with PbS colloidal nanocrystals.

Satria Zulkarnaen Bisri, Claudia Piliego, Maksym Yarema, Wolfgang Johann Heiß, Maria Antonietta Loi

Department of Solid State Physics

Research output: Contribution to journal › Article › peer-review

Abstract

PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size-tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs.

Original language	English
Pages (from-to)	4309–4314
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	31
DOIs	https://doi.org/10.1002/adma.201205041
Publication status	Published - 2013

Fields of science

103009 Solid state physics
103021 Optics
103011 Semiconductor physics
103 Physics, Astronomy

JKU Focus areas

Engineering and Natural Sciences (in general)

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10.1002/adma.201205041

Cite this

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title = "Low driving voltage and high mobility ambipolar field-effect transistors with PbS colloidal nanocrystals.",

abstract = "PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size-tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs.",

author = "Bisri, \{Satria Zulkarnaen\} and Claudia Piliego and Maksym Yarema and Hei{\ss}, \{Wolfgang Johann\} and Loi, \{Maria Antonietta\}",

year = "2013",

doi = "10.1002/adma.201205041",

language = "English",

volume = "25",

pages = "4309–4314",

journal = "Advanced Materials",

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AU - Bisri, Satria Zulkarnaen

AU - Piliego, Claudia

AU - Yarema, Maksym

AU - Heiß, Wolfgang Johann

AU - Loi, Maria Antonietta

PY - 2013

Y1 - 2013

N2 - PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size-tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs.

AB - PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size-tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs.

UR - https://www.scopus.com/pages/publications/84882442591

U2 - 10.1002/adma.201205041

DO - 10.1002/adma.201205041

M3 - Article

SN - 1521-4095

VL - 25

SP - 4309

EP - 4314

JO - Advanced Materials

JF - Advanced Materials

IS - 31

ER -

Low driving voltage and high mobility ambipolar field-effect transistors with PbS colloidal nanocrystals.

Abstract

Fields of science

JKU Focus areas

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