Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?

G. Otto, Leopold Palmetshofer, P. Pongratz, G. Hobler

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	227-231
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research Section B
Volume	253
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2006.10.031
Publication status	Published - Dec 2006

Fields of science

@article{f664aa041335432786546fdd30009919,

title = "Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?",

author = "G. Otto and Leopold Palmetshofer and P. Pongratz and G. Hobler",

year = "2006",

month = dec,

doi = "10.1016/j.nimb.2006.10.031",

language = "English",

volume = "253",

pages = "227--231",

journal = "Nuclear Instruments and Methods in Physics Research Section B",

issn = "1872-9584",