Investigation of inhomogeneous in-plane strain relaxation in Si/SiGe quantum wires by high resolution x-ray diffraction

Günther Bauer; A. Daniel; J. Grenzer; U. Pietsch; T. Roch; Friedrich Schäffler; Christoph Schelling; S. Senz; Y. Zhuang

doi:10.1557/proc-590-207

Investigation of inhomogeneous in-plane strain relaxation in Si/SiGe quantum wires by high resolution x-ray diffraction

Günther Bauer, A. Daniel, J. Grenzer, U. Pietsch, T. Roch, Friedrich Schäffler, Christoph Schelling, S. Senz, Y. Zhuang

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	MRS Online Proceedings Library
DOIs	https://doi.org/10.1557/proc-590-207
Publication status	Published - 2000

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1557/proc-590-207

Cite this

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title = "Investigation of inhomogeneous in-plane strain relaxation in Si/SiGe quantum wires by high resolution x-ray diffraction",

author = "G{\"u}nther Bauer and A. Daniel and J. Grenzer and U. Pietsch and T. Roch and Friedrich Sch{\"a}ffler and Christoph Schelling and S. Senz and Y. Zhuang",

year = "2000",

doi = "10.1557/proc-590-207",

language = "English",

journal = "MRS Online Proceedings Library",

}

TY - JOUR

T1 - Investigation of inhomogeneous in-plane strain relaxation in Si/SiGe quantum wires by high resolution x-ray diffraction

AU - Bauer, Günther

AU - Daniel, A.

AU - Grenzer, J.

AU - Pietsch, U.

AU - Roch, T.

AU - Schäffler, Friedrich

AU - Schelling, Christoph

AU - Senz, S.

AU - Zhuang, Y.

PY - 2000

Y1 - 2000

U2 - 10.1557/proc-590-207

DO - 10.1557/proc-590-207

M3 - Article

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

ER -