Integration of MOSFETs with SiGe dots as stressor material

Lis K. Nanver; Vladimir Jovanovic; C. Biasotto; J. Moers; Detlev Grützmacher; Jianjun Zhang; Nina Hrauda; Mathieu Stoffel; Fabio Pezzoli; Oliver G. Schmidt; Leo Miglio; H. Kosina; A. Marzegalli; Guglielmo Vastola; Georg Mussler; Julian Stangl; Günther Bauer; J. van der Cingel; E. Bonera

doi:10.1016/j.sse.2011.01.038

Integration of MOSFETs with SiGe dots as stressor material

Lis K. Nanver, Vladimir Jovanovic, C. Biasotto, J. Moers, Detlev Grützmacher, Jianjun Zhang, Nina Hrauda, Mathieu Stoffel, Fabio Pezzoli, Oliver G. Schmidt, Leo Miglio, H. Kosina, A. Marzegalli, Guglielmo Vastola, Georg Mussler, Julian Stangl, Günther Bauer, J. van der Cingel, E. Bonera

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	75-83
Number of pages	9
Journal	Solid-State Electronics
Volume	60
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.01.038
Publication status	Published - Jun 2011

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

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Nanver, L. K., Jovanovic, V., Biasotto, C., Moers, J., Grützmacher, D., Zhang, J., Hrauda, N., Stoffel, M., Pezzoli, F., Schmidt, O. G., Miglio, L., Kosina, H., Marzegalli, A., Vastola, G., Mussler, G., Stangl, J., Bauer, G., van der Cingel, J., & Bonera, E. (2011). Integration of MOSFETs with SiGe dots as stressor material. Solid-State Electronics, 60(1), 75-83. https://doi.org/10.1016/j.sse.2011.01.038

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title = "Integration of MOSFETs with SiGe dots as stressor material",

author = "Nanver, \{Lis K.\} and Vladimir Jovanovic and C. Biasotto and J. Moers and Detlev Gr{\"u}tzmacher and Jianjun Zhang and Nina Hrauda and Mathieu Stoffel and Fabio Pezzoli and Schmidt, \{Oliver G.\} and Leo Miglio and H. Kosina and A. Marzegalli and Guglielmo Vastola and Georg Mussler and Julian Stangl and G{\"u}nther Bauer and \{van der Cingel\}, J. and E. Bonera",

year = "2011",

month = jun,

doi = "10.1016/j.sse.2011.01.038",

language = "English",

volume = "60",

pages = "75--83",

journal = "Solid-State Electronics",

issn = "0038-1101",

number = "1",

}

Nanver, LK, Jovanovic, V, Biasotto, C, Moers, J, Grützmacher, D, Zhang, J, Hrauda, N, Stoffel, M, Pezzoli, F, Schmidt, OG, Miglio, L, Kosina, H, Marzegalli, A, Vastola, G, Mussler, G, Stangl, J, Bauer, G, van der Cingel, J & Bonera, E 2011, 'Integration of MOSFETs with SiGe dots as stressor material', Solid-State Electronics, vol. 60, no. 1, pp. 75-83. https://doi.org/10.1016/j.sse.2011.01.038

TY - JOUR

T1 - Integration of MOSFETs with SiGe dots as stressor material

AU - Nanver, Lis K.

AU - Jovanovic, Vladimir

AU - Biasotto, C.

AU - Moers, J.

AU - Grützmacher, Detlev

AU - Zhang, Jianjun

AU - Hrauda, Nina

AU - Stoffel, Mathieu

AU - Pezzoli, Fabio

AU - Schmidt, Oliver G.

AU - Miglio, Leo

AU - Kosina, H.

AU - Marzegalli, A.

AU - Vastola, Guglielmo

AU - Mussler, Georg

AU - Stangl, Julian

AU - Bauer, Günther

AU - van der Cingel, J.

AU - Bonera, E.

PY - 2011/6

Y1 - 2011/6

UR - https://www.scopus.com/pages/publications/79955524752

U2 - 10.1016/j.sse.2011.01.038

DO - 10.1016/j.sse.2011.01.038

M3 - Article

SN - 0038-1101

VL - 60

SP - 75

EP - 83

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Integration of MOSFETs with SiGe dots as stressor material

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