Inhomogeneous strain relaxation in dry etched Si/SiGe wires: a high resolution x-ray diffraction study

Y. Zhuang; Vaclav Holy; Julian Stangl; Stefan Zerlauth; Friedrich Schäffler; Günther Bauer; U. Pietsch; N. Darowski

Inhomogeneous strain relaxation in dry etched Si/SiGe wires: a high resolution x-ray diffraction study

Y. Zhuang, Vaclav Holy, Julian Stangl, Stefan Zerlauth, Friedrich Schäffler, Günther Bauer, U. Pietsch, N. Darowski

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Physical Review B
Publication status	Published - 2000

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@article{977577a8837f43b8b4fdbd35c07fbdbe,

title = "Inhomogeneous strain relaxation in dry etched Si/SiGe wires: a high resolution x-ray diffraction study",

author = "Y. Zhuang and Vaclav Holy and Julian Stangl and Stefan Zerlauth and Friedrich Sch{\"a}ffler and G{\"u}nther Bauer and U. Pietsch and N. Darowski",

year = "2000",

language = "English",

journal = "Physical Review B",

publisher = "The American Physical Society",

}