Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy

V. G. Shengurov; S.P. Svetlov; V.Yu. Chalkov; G.A. Maksimov; Z. F. Krasilnik; B.A. Andreev; Margarita V. Stepikhova; Leopold Palmetshofer; Heinz Ellmer

Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy

V. G. Shengurov, S.P. Svetlov, V.Yu. Chalkov, G.A. Maksimov, Z. F. Krasilnik, B.A. Andreev, Margarita V. Stepikhova, Leopold Palmetshofer, Heinz Ellmer

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings

Original language	English
Title of host publication	Proc. Russ. Acad. Sciences, Ser. of Physics
Pages	289-291
Number of pages	3
Volume	65
Edition	2
Publication status	Published - 2001

Publication series

Name	Izvestiya Akademii Nauk. Ser. Fizicheskaya
ISSN (Print)	0367-6765

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
210006 Nanotechnology
103040 Photonics
202032 Photovoltaics

Cite this

Shengurov, V. G., Svetlov, S. P., Chalkov, V. Y., Maksimov, G. A., Krasilnik, Z. F., Andreev, B. A., Stepikhova, M. V., Palmetshofer, L., & Ellmer, H. (2001). Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy. In Proc. Russ. Acad. Sciences, Ser. of Physics (2 ed., Vol. 65, pp. 289-291). (Izvestiya Akademii Nauk. Ser. Fizicheskaya).

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title = "Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy",

author = "Shengurov, \{V. G.\} and S.P. Svetlov and V.Yu. Chalkov and G.A. Maksimov and Krasilnik, \{Z. F.\} and B.A. Andreev and Stepikhova, \{Margarita V.\} and Leopold Palmetshofer and Heinz Ellmer",

year = "2001",

language = "English",

volume = "65",

series = "Izvestiya Akademii Nauk. Ser. Fizicheskaya",

pages = "289--291",

booktitle = "Proc. Russ. Acad. Sciences, Ser. of Physics",

edition = "2",

}

Shengurov, VG, Svetlov, SP, Chalkov, VY, Maksimov, GA, Krasilnik, ZF, Andreev, BA, Stepikhova, MV, Palmetshofer, L & Ellmer, H 2001, Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy. in Proc. Russ. Acad. Sciences, Ser. of Physics. 2 edn, vol. 65, Izvestiya Akademii Nauk. Ser. Fizicheskaya, pp. 289-291.

Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy. / Shengurov, V. G.; Svetlov, S.P.; Chalkov, V.Yu. et al.
Proc. Russ. Acad. Sciences, Ser. of Physics. Vol. 65 2. ed. 2001. p. 289-291 (Izvestiya Akademii Nauk. Ser. Fizicheskaya).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings

TY - GEN

T1 - Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy

AU - Shengurov, V. G.

AU - Svetlov, S.P.

AU - Chalkov, V.Yu.

AU - Maksimov, G.A.

AU - Krasilnik, Z. F.

AU - Andreev, B.A.

AU - Stepikhova, Margarita V.

AU - Palmetshofer, Leopold

AU - Ellmer, Heinz

PY - 2001

Y1 - 2001

UR - https://www.scopus.com/pages/publications/33749218122

M3 - Conference proceedings

VL - 65

T3 - Izvestiya Akademii Nauk. Ser. Fizicheskaya

SP - 289

EP - 291

BT - Proc. Russ. Acad. Sciences, Ser. of Physics

ER -

Influence of the growth conditions on the building in processes of rare earth doping elements in silicon layer during the molecular beam epitaxy

Publication series

Fields of science

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Cite this