Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping

Oliver G. Schmidt; Tobias Schülli; Mathieu Stoffel; Anke Hesse; Till Hartmut Metzger; Rainer T. Lechner; Eugen Wintersberger; Michael Sztucki; Günther Bauer; Julian Stangl

doi:10.1103/PhysRevB.71.035326

Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping

Oliver G. Schmidt, Tobias Schülli, Mathieu Stoffel, Anke Hesse, Till Hartmut Metzger, Rainer T. Lechner, Eugen Wintersberger, Michael Sztucki, Günther Bauer, Julian Stangl

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	035326
Pages (from-to)	035326
Number of pages	10
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	71
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.71.035326
Publication status	Published - 2005

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

Access to Document

10.1103/PhysRevB.71.035326

Cite this

Schmidt, O. G., Schülli, T., Stoffel, M., Hesse, A., Metzger, T. H., Lechner, R. T., Wintersberger, E., Sztucki, M., Bauer, G., & Stangl, J. (2005). Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping. Physical Review B: Condensed Matter and Materials Physics, 71(3), 035326. Article 035326. https://doi.org/10.1103/PhysRevB.71.035326

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title = "Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping",

author = "Schmidt, {Oliver G.} and Tobias Sch{\"u}lli and Mathieu Stoffel and Anke Hesse and Metzger, {Till Hartmut} and Lechner, {Rainer T.} and Eugen Wintersberger and Michael Sztucki and G{\"u}nther Bauer and Julian Stangl",

year = "2005",

doi = "10.1103/PhysRevB.71.035326",

language = "English",

volume = "71",

pages = "035326",

journal = "Physical Review B: Condensed Matter and Materials Physics",

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Schmidt, OG, Schülli, T, Stoffel, M, Hesse, A, Metzger, TH, Lechner, RT, Wintersberger, E, Sztucki, M, Bauer, G & Stangl, J 2005, 'Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping', Physical Review B: Condensed Matter and Materials Physics, vol. 71, no. 3, 035326, pp. 035326. https://doi.org/10.1103/PhysRevB.71.035326

Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping. / Schmidt, Oliver G.; Schülli, Tobias; Stoffel, Mathieu et al.
In: Physical Review B: Condensed Matter and Materials Physics, Vol. 71, No. 3, 035326, 2005, p. 035326.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping

AU - Schmidt, Oliver G.

AU - Schülli, Tobias

AU - Stoffel, Mathieu

AU - Hesse, Anke

AU - Metzger, Till Hartmut

AU - Lechner, Rainer T.

AU - Wintersberger, Eugen

AU - Sztucki, Michael

AU - Bauer, Günther

AU - Stangl, Julian

PY - 2005

Y1 - 2005

U2 - 10.1103/PhysRevB.71.035326

DO - 10.1103/PhysRevB.71.035326

M3 - Article

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VL - 71

SP - 035326

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 3

M1 - 035326

ER -