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Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction

  • Zhenyang Zhong
  • , O. Ambacher
  • , A. Link
  • , Vaclav Holy
  • , Julian Stangl
  • , Rainer T. Lechner
  • , T. Roch
  • , Günther Bauer

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)3521-3523
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number19
DOIs
Publication statusPublished - 13 May 2002

Fields of science

  • 103 Physics, Astronomy
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology

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