Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

Research output: Contribution to journalConference articlepeer-review

Original languageEnglish
Pages (from-to)123-127
Number of pages5
JournalJournal of Crystal Growth
Volume288
Issue number1
DOIs
Publication statusPublished - 02 Feb 2006

Fields of science

  • 103 Physics, Astronomy
  • 104005 Electrochemistry
  • 104016 Photochemistry
  • 104017 Physical chemistry

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