Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires

S. Lancaster; Aaron M. Andrews; Michael Stoeger-Pollach; Andreas Steiger-Thirsfeld; Heiko Groiß; W. Schrenk; G. Strasser; H. Detz

doi:10.1002/pssb.201970021

Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires

S. Lancaster, Aaron M. Andrews, Michael Stoeger-Pollach, Andreas Steiger-Thirsfeld, Heiko Groiß, W. Schrenk, G. Strasser, H. Detz

Center for Surface and Nanoanalytics

Research output: Other contribution

Original language	English
DOIs	https://doi.org/10.1002/pssb.201970021
Publication status	Published - May 2019

Fields of science

210006 Nanotechnology
103 Physics, Astronomy
103020 Surface physics
103021 Optics

JKU Focus areas

Sustainable Development: Responsible Technologies and Management

Access to Document

10.1002/pssb.201970021

Cite this

@misc{7923f4dbdb7d41ae9db805f3901ba447,

title = "Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires",

author = "S. Lancaster and Andrews, \{Aaron M.\} and Michael Stoeger-Pollach and Andreas Steiger-Thirsfeld and Heiko Groi{\ss} and W. Schrenk and G. Strasser and H. Detz",

year = "2019",

month = may,

doi = "10.1002/pssb.201970021",

language = "English",

type = "Other",

}

TY - GEN

T1 - Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires

AU - Lancaster, S.

AU - Andrews, Aaron M.

AU - Stoeger-Pollach, Michael

AU - Steiger-Thirsfeld, Andreas

AU - Groiß, Heiko

AU - Schrenk, W.

AU - Strasser, G.

AU - Detz, H.

PY - 2019/5

Y1 - 2019/5

U2 - 10.1002/pssb.201970021

DO - 10.1002/pssb.201970021

M3 - Other contribution

ER -