Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires.

Suzanne Lancester, Aaron M. Andrews, Michael Stoeger-Pollach, Andreas Steiger-Thirsfeld, Heiko Groiß, Werner Schrenk, G. Strasser, H. Detz

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number1800368
Number of pages5
JournalPhysica Status Solidi B: Basic Research
Volume256
Issue number5
DOIs
Publication statusPublished - May 2019

Fields of science

  • 210006 Nanotechnology
  • 103 Physics, Astronomy
  • 103020 Surface physics
  • 103021 Optics

JKU Focus areas

  • Sustainable Development: Responsible Technologies and Management

Cite this