Incorporation of Mn in AlxGa1-xN probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction, and first-principles calculations

Research output: Contribution to journalArticlepeer-review

Abstract

Synchrotron radiation x-ray absorption and emission spectroscopy techniques, complemented by high-resolution transmission electron microscopy methods and density functional theory calculations, are employed to investigate the effect of Mn in AlxGa1−xN:Mn samples with an Al content up to 100%. The atomic and electronic structure of Mn is established together with its local environment and valence state. A dilute alloy without precipitation is obtained for AlxGa1−xN:Mn with Al concentrations up to 82%, and the surfactant role of Mn in the epitaxial process is confirmed.
Original languageEnglish
Article number115308
Pages (from-to)115308
Number of pages9
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume92
Issue number11
DOIs
Publication statusPublished - 21 Sept 2015

Fields of science

  • 210006 Nanotechnology
  • 103 Physics, Astronomy
  • 103011 Semiconductor physics
  • 103018 Materials physics
  • 202032 Photovoltaics
  • 103009 Solid state physics
  • 103017 Magnetism

JKU Focus areas

  • Engineering and Natural Sciences (in general)

Cite this