In situ optical analysis of low-temperature MOCVD GaN nucleation layer formation via multiple wavelength ellipsometry

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)106-110
Number of pages5
JournalJournal of Crystal Growth
Volume272
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - 10 Dec 2004

Fields of science

  • 103 Physics, Astronomy
  • 103008 Experimental physics
  • 103020 Surface physics
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 210006 Nanotechnology
  • 103040 Photonics
  • 202032 Photovoltaics

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