Impact of Electrolyte Incorporation in Anodized Niobium on Its Resistive Switching

Ivana Zrinski; Marvin Löfler; Janez Zavasnik; Claudia Cancellieri; Lars Jeurgens; Achim Walter Hassel; Andrei Ionut Mardare

doi:10.3390/nano12050813

Impact of Electrolyte Incorporation in Anodized Niobium on Its Resistive Switching

Ivana Zrinski, Marvin Löfler, Janez Zavasnik, Claudia Cancellieri, Lars Jeurgens, Achim Walter Hassel, Andrei Ionut Mardare

Institute of Chemical Technology of Inorganic Materials

Research output: Contribution to journal › Article › peer-review

Abstract

The aim of this study was to develop memristors based on Nb2O5 grown by a simple and inexpensive electrochemical anodization process. It was confirmed that the electrolyte selection plays a crucial role in resistive switching due to electrolyte species incorporation in oxide, thus influencing the formation of conductive filaments. Anodic memristors grown in phosphate buffer showed improved electrical characteristics, while those formed in citrated buffer exhibited excellent memory capabilities. The chemical composition of oxides was successfully determined using HAXPES, while their phase composition and crystal structure with conductive filaments was assessed by TEM at the nanoscale. Overall, understanding the switching mechanism leads towards a wide range of possible applications for Nb memristors either as selector devices or nonvolatile memories.

Original language	English
Number of pages	15
Journal	Nanomaterials
Volume	12
DOIs	https://doi.org/10.3390/nano12050813
Publication status	Published - 2022

Fields of science

204 Chemical Process Engineering
205016 Materials testing
210006 Nanotechnology
104014 Surface chemistry
105113 Crystallography
105116 Mineralogy
204001 Inorganic chemical technology
211104 Metallurgy
104005 Electrochemistry
104006 Solid state chemistry
104017 Physical chemistry
503013 Subject didactics of natural sciences

JKU Focus areas

Sustainable Development: Responsible Technologies and Management

Access to Document

10.3390/nano12050813

Cite this

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title = "Impact of Electrolyte Incorporation in Anodized Niobium on Its Resistive Switching",

abstract = "The aim of this study was to develop memristors based on Nb2O5 grown by a simple and inexpensive electrochemical anodization process. It was confirmed that the electrolyte selection plays a crucial role in resistive switching due to electrolyte species incorporation in oxide, thus influencing the formation of conductive filaments. Anodic memristors grown in phosphate buffer showed improved electrical characteristics, while those formed in citrated buffer exhibited excellent memory capabilities. The chemical composition of oxides was successfully determined using HAXPES, while their phase composition and crystal structure with conductive filaments was assessed by TEM at the nanoscale. Overall, understanding the switching mechanism leads towards a wide range of possible applications for Nb memristors either as selector devices or nonvolatile memories.",

author = "Ivana Zrinski and Marvin L{\"o}fler and Janez Zavasnik and Claudia Cancellieri and Lars Jeurgens and Hassel, {Achim Walter} and Mardare, {Andrei Ionut}",

year = "2022",

doi = "10.3390/nano12050813",

language = "English",

volume = "12",

journal = "Nanomaterials",

issn = "2079-4991",

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TY - JOUR

T1 - Impact of Electrolyte Incorporation in Anodized Niobium on Its Resistive Switching

AU - Zrinski, Ivana

AU - Löfler, Marvin

AU - Zavasnik, Janez

AU - Cancellieri, Claudia

AU - Jeurgens, Lars

AU - Hassel, Achim Walter

AU - Mardare, Andrei Ionut

PY - 2022

Y1 - 2022

N2 - The aim of this study was to develop memristors based on Nb2O5 grown by a simple and inexpensive electrochemical anodization process. It was confirmed that the electrolyte selection plays a crucial role in resistive switching due to electrolyte species incorporation in oxide, thus influencing the formation of conductive filaments. Anodic memristors grown in phosphate buffer showed improved electrical characteristics, while those formed in citrated buffer exhibited excellent memory capabilities. The chemical composition of oxides was successfully determined using HAXPES, while their phase composition and crystal structure with conductive filaments was assessed by TEM at the nanoscale. Overall, understanding the switching mechanism leads towards a wide range of possible applications for Nb memristors either as selector devices or nonvolatile memories.

AB - The aim of this study was to develop memristors based on Nb2O5 grown by a simple and inexpensive electrochemical anodization process. It was confirmed that the electrolyte selection plays a crucial role in resistive switching due to electrolyte species incorporation in oxide, thus influencing the formation of conductive filaments. Anodic memristors grown in phosphate buffer showed improved electrical characteristics, while those formed in citrated buffer exhibited excellent memory capabilities. The chemical composition of oxides was successfully determined using HAXPES, while their phase composition and crystal structure with conductive filaments was assessed by TEM at the nanoscale. Overall, understanding the switching mechanism leads towards a wide range of possible applications for Nb memristors either as selector devices or nonvolatile memories.

U2 - 10.3390/nano12050813

DO - 10.3390/nano12050813

M3 - Article

SN - 2079-4991

VL - 12

JO - Nanomaterials

JF - Nanomaterials

ER -