Abstract
A comprehensive study of the anodic oxide formation on Hf-Ti alloys over the entire range of composition was conducted. Combinatorial thin film libraries were prepared by co-sputtering. HRSEM and XRD were used to characterize the thin films and to confirm that a continuous change of the composition was obtained for this fully miscible system. Electrochemical investigations were performed by means of an automatic scanning droplet cell with a droplet radius of 100 µm. Subsequent potentiodynamic scans with intermittent impedance measurements allowed a quantitative determination of film formation factor and dielectric constant for each composition with a resolution of 0.5 at.%. MottSchottky analysis of the oxides was used to evaluate the relationship between parent metal composition and oxide properties, namely flat band potential and donor density. The structureproperty and compositionproperty relationships are discussed in detail.
| Original language | English |
|---|---|
| Pages (from-to) | 5171-5178 |
| Number of pages | 8 |
| Journal | Electrochimica Acta |
| Volume | 54 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 01 Sept 2009 |
Fields of science
- 104005 Electrochemistry
- 104006 Solid state chemistry
- 104014 Surface chemistry
- 104017 Physical chemistry
- 105113 Crystallography
- 105116 Mineralogy
- 503013 Subject didactics of natural sciences
- 204 Chemical Process Engineering
- 204001 Inorganic chemical technology
- 205016 Materials testing
- 210006 Nanotechnology
- 211104 Metallurgy
JKU Focus areas
- Engineering and Natural Sciences (in general)