High-mobility Si and Ge structures

Research output: Contribution to journal › Review article › peer-review

Original language	English
Pages (from-to)	1515-1549
Number of pages	35
Journal	Semiconductor Science and Technology
Volume	12
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/12/12/001
Publication status	Published - Dec 1997

Fields of science

@article{c84d238045134fdfb3bd37d5b88c74da,

title = "High-mobility Si and Ge structures",

author = "Friedrich Sch{\"a}ffler",

year = "1997",

month = dec,

doi = "10.1088/0268-1242/12/12/001",

language = "English",

volume = "12",

pages = "1515--1549",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

number = "12",

}

TY - JOUR

T1 - High-mobility Si and Ge structures

AU - Schäffler, Friedrich

PY - 1997/12

Y1 - 1997/12

UR - https://www.scopus.com/pages/publications/0342853202

U2 - 10.1088/0268-1242/12/12/001

DO - 10.1088/0268-1242/12/12/001

M3 - Review article

SN - 0268-1242

VL - 12

SP - 1515

EP - 1549

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

ER -