High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors

M. I. Nugraha; R. Häusemann; Satria Zulkarnaen Bisri; H. Matsui; Mykhailo Sytnyk; Wolfgang Johann Heiß; Y. Takeya; Maria Antonietta Loi

doi:10.1002/adma.201404495

High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors

M. I. Nugraha, R. Häusemann, Satria Zulkarnaen Bisri, H. Matsui, Mykhailo Sytnyk, Wolfgang Johann Heiß, Y. Takeya, Maria Antonietta Loi

Department of Solid State Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm2 V−1 s−1) and the high on/off ratio (105–106), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

Original language	English
Pages (from-to)	2107–2112
Number of pages	6
Journal	Advanced Materials
Volume	27
Issue number	12
DOIs	https://doi.org/10.1002/adma.201404495
Publication status	Published - 2015

Fields of science

210006 Nanotechnology
103 Physics, Astronomy
103011 Semiconductor physics
103018 Materials physics
202032 Photovoltaics
103009 Solid state physics
103017 Magnetism

JKU Focus areas

Engineering and Natural Sciences (in general)

Access to Document

10.1002/adma.201404495

Cite this

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title = "High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors",

abstract = "Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm2 V−1 s−1) and the high on/off ratio (105–106), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.",

author = "Nugraha, {M. I.} and R. H{\"a}usemann and Bisri, {Satria Zulkarnaen} and H. Matsui and Mykhailo Sytnyk and Hei{\ss}, {Wolfgang Johann} and Y. Takeya and Loi, {Maria Antonietta}",

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doi = "10.1002/adma.201404495",

language = "English",

volume = "27",

pages = "2107–2112",

journal = "Advanced Materials",

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T1 - High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors

AU - Nugraha, M. I.

AU - Häusemann, R.

AU - Bisri, Satria Zulkarnaen

AU - Matsui, H.

AU - Sytnyk, Mykhailo

AU - Heiß, Wolfgang Johann

AU - Takeya, Y.

AU - Loi, Maria Antonietta

PY - 2015

Y1 - 2015

N2 - Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm2 V−1 s−1) and the high on/off ratio (105–106), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

AB - Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm2 V−1 s−1) and the high on/off ratio (105–106), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

U2 - 10.1002/adma.201404495

DO - 10.1002/adma.201404495

M3 - Article

SN - 1521-4095

VL - 27

SP - 2107

EP - 2112

JO - Advanced Materials

JF - Advanced Materials

IS - 12

ER -