Growth conditions for complete substitutional carbon incorporation into Si 1-yC y layers grown by molecular beam epitaxy

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)3826-3828
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number26
DOIs
Publication statusPublished - 29 Dec 1997

Fields of science

  • 103 Physics, Astronomy
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology

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