Growth and characterization of Zn
            1-xMn
            xTe epilayers grown by hot wall epitaxy on (001)GaAs substrates

Eduardo Abramof; Thomas Fromherz; Wolfgang Jantsch; P. Juza; A. Pesek; Helmut Sitter

doi:10.1063/1.107028

Growth and characterization of Zn _1-xMn _xTe epilayers grown by hot wall epitaxy on (001)GaAs substrates

Eduardo Abramof, Thomas Fromherz, Wolfgang Jantsch, P. Juza, A. Pesek, Helmut Sitter

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2368-2370
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	19
DOIs	https://doi.org/10.1063/1.107028
Publication status	Published - 1992

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

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10.1063/1.107028

Cite this

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title = "Growth and characterization of Zn 1-xMn xTe epilayers grown by hot wall epitaxy on (001)GaAs substrates",

author = "Eduardo Abramof and Thomas Fromherz and Wolfgang Jantsch and P. Juza and A. Pesek and Helmut Sitter",

year = "1992",

doi = "10.1063/1.107028",

language = "English",

volume = "60",

pages = "2368--2370",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Growth and characterization of Zn 1-xMn xTe epilayers grown by hot wall epitaxy on (001)GaAs substrates

AU - Abramof, Eduardo

AU - Fromherz, Thomas

AU - Jantsch, Wolfgang

AU - Juza, P.

AU - Pesek, A.

AU - Sitter, Helmut

PY - 1992

Y1 - 1992

UR - https://www.scopus.com/pages/publications/0001606060

U2 - 10.1063/1.107028

DO - 10.1063/1.107028

M3 - Article

SN - 0003-6951

VL - 60

SP - 2368

EP - 2370

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Growth and characterization of Zn 1-xMn xTe epilayers grown by hot wall epitaxy on (001)GaAs substrates

Fields of science

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Growth and characterization of Zn _1-xMn _xTe epilayers grown by hot wall epitaxy on (001)GaAs substrates