TY - JOUR
T1 - Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition
AU - Cecchi, Stefano
AU - Etzelstorfer, Tanja
AU - Müller-Gubler, Elisabeth
AU - Samarelli, Antonio
AU - Ferre-LLin, Lourdes
AU - Chrastina, Daniel
AU - Isella, G.
AU - Stangl, Julian
AU - Weaver, J.M.R.
AU - Dobson, P.
PY - 2013/7
Y1 - 2013/7
N2 - Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-μm-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2 mW/K2m to 6 mW/K2m is promising for applications.
AB - Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-μm-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2 mW/K2m to 6 mW/K2m is promising for applications.
UR - https://www.scopus.com/pages/publications/84879799211
U2 - 10.1007/s11664-013-2511-5
DO - 10.1007/s11664-013-2511-5
M3 - Article
SN - 0361-5235
VL - 42
SP - 2030
EP - 2034
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 7
ER -