Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition

Stefano Cecchi; Tanja Etzelstorfer; Elisabeth Müller-Gubler; Antonio Samarelli; Lourdes Ferre-LLin; Daniel Chrastina; G. Isella; Julian Stangl; J.M.R. Weaver; P. Dobson

doi:10.1007/s11664-013-2511-5

Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition

Stefano Cecchi, Tanja Etzelstorfer, Elisabeth Müller-Gubler, Antonio Samarelli, Lourdes Ferre-LLin, Daniel Chrastina, G. Isella, Julian Stangl, J.M.R. Weaver, P. Dobson

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-μm-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2 mW/K2m to 6 mW/K2m is promising for applications.

Original language	English
Pages (from-to)	2030-2034
Number of pages	5
Journal	Journal of Electronic Materials
Volume	42
DOIs	https://doi.org/10.1007/s11664-013-2511-5
Publication status	Published - 2013

Fields of science

103 Physics, Astronomy

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

Access to Document

10.1007/s11664-013-2511-5

Cite this

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title = "Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition",

abstract = "Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-μm-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2 mW/K2m to 6 mW/K2m is promising for applications.",

author = "Stefano Cecchi and Tanja Etzelstorfer and Elisabeth M{\"u}ller-Gubler and Antonio Samarelli and Lourdes Ferre-LLin and Daniel Chrastina and G. Isella and Julian Stangl and J.M.R. Weaver and P. Dobson",

year = "2013",

doi = "10.1007/s11664-013-2511-5",

language = "English",

volume = "42",

pages = "2030--2034",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "The Minerals, Metals & Materials Society",

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TY - JOUR

T1 - Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition

AU - Cecchi, Stefano

AU - Etzelstorfer, Tanja

AU - Müller-Gubler, Elisabeth

AU - Samarelli, Antonio

AU - Ferre-LLin, Lourdes

AU - Chrastina, Daniel

AU - Isella, G.

AU - Stangl, Julian

AU - Weaver, J.M.R.

AU - Dobson, P.

PY - 2013

Y1 - 2013

N2 - Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-μm-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2 mW/K2m to 6 mW/K2m is promising for applications.

AB - Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-μm-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2 mW/K2m to 6 mW/K2m is promising for applications.

U2 - 10.1007/s11664-013-2511-5

DO - 10.1007/s11664-013-2511-5

M3 - Article

SN - 0361-5235

VL - 42

SP - 2030

EP - 2034

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

ER -