@article{b5332f0c2ef44e5ca5abc8d81e922a82,
title = "Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth Environment",
keywords = "strain, positron annihilation lifetime spectroscopy, silicon, nanobeam X-ray diffraction, germanium, transmission electron microscopy, epitaxy",
author = "Christoph Wilflingseder and Johannes Aberl and Enrique Prado-Navarrete and G{\"u}nter Hesser and Heiko Groiss and Liedke, \{Maciej O.\} and Maik Butterling and Andreas Wagner and Eric Hirschmann and Cedric Corley-Wiciak and Zoellner, \{Marvin Hartwig\} and Giovanni Capellini and Thomas Fromherz and Moritz Brehm",
note = "Publisher Copyright: {\textcopyright} 2024 The Authors. Published by American Chemical Society.",
year = "2024",
month = dec,
day = "24",
language = "English",
volume = "6",
pages = "9029--9039",
journal = "ACS Applied Electronic Materials",
issn = "2637-6113",
number = "12",
}