Formation of quantum dots in the contact region of high-mobility Si nversion layers in the metal-insulator transition regime

Georg Pillwein, Benjamin Lindner, M. Prunnila, J. Ahopelto, Gerhard Brunthaler

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Original language	English
Title of host publication	Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006
Editors	W. Jantsch, F. Schäffler
Place of Publication	Melville, NY
Pages	599-600
Number of pages	2
Volume	893
Publication status	Published - 2007

Name	AIP Conference Proceedings

Fields of science

This output contributes to the following UN Sustainable Development Goals (SDGs)

Pillwein, G., Lindner, B., Prunnila, M., Ahopelto, J., & Brunthaler, G. (2007). Formation of quantum dots in the contact region of high-mobility Si nversion layers in the metal-insulator transition regime. In W. Jantsch, F. Schäffler (Ed.), Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006 (Vol. 893, pp. 599-600). (AIP Conference Proceedings)..

Pillwein, Georg ; Lindner, Benjamin ; Prunnila, M. et al. / Formation of quantum dots in the contact region of high-mobility Si nversion layers in the metal-insulator transition regime. Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006. editor / W. Jantsch, F. Schäffler. Vol. 893 Melville, NY, 2007. pp. 599-600 (AIP Conference Proceedings).

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title = "Formation of quantum dots in the contact region of high-mobility Si nversion layers in the metal-insulator transition regime",

author = "Georg Pillwein and Benjamin Lindner and M. Prunnila and J. Ahopelto and Gerhard Brunthaler",

year = "2007",

language = "English",

volume = "893",

series = "AIP Conference Proceedings",

pages = "599--600",

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booktitle = "Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006",

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Pillwein, G, Lindner, B, Prunnila, M, Ahopelto, J & Brunthaler, G 2007, Formation of quantum dots in the contact region of high-mobility Si nversion layers in the metal-insulator transition regime. in W. Jantsch, F. Schäffler (ed.), Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006. vol. 893, AIP Conference Proceedings, Melville, NY, pp. 599-600.

Formation of quantum dots in the contact region of high-mobility Si nversion layers in the metal-insulator transition regime. / Pillwein, Georg; Lindner, Benjamin; Prunnila, M. et al.
Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006. ed. / W. Jantsch, F. Schäffler. Vol. 893 Melville, NY, 2007. p. 599-600 (AIP Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

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AU - Pillwein, Georg

AU - Lindner, Benjamin

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AU - Ahopelto, J.

AU - Brunthaler, Gerhard

PY - 2007

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M3 - Conference proceedings

VL - 893

T3 - AIP Conference Proceedings

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EP - 600

BT - Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006

A2 - W. Jantsch, F. Schäffler, null

CY - Melville, NY

ER -

Pillwein G, Lindner B, Prunnila M, Ahopelto J, Brunthaler G. Formation of quantum dots in the contact region of high-mobility Si nversion layers in the metal-insulator transition regime. In W. Jantsch, F. Schäffler, editor, Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006. Vol. 893. Melville, NY. 2007. p. 599-600. (AIP Conference Proceedings).