@article{ea202861802f4f60b0e53de287622388,
title = "Fabrication of n- and p- channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing",
author = "G. Abstreiter and P. Baumgartner and C. Engel and M. Holzmann and J. N{\"u}tzel and Friedrich Sch{\"a}ffler",
year = "1996",
doi = "10.1063/1.115565",
language = "English",
volume = "68",
pages = "3025--3027",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "21",
}