Abstract
We report on the preparation of epitaxial MgO film on GaAs(001) substrates by molecular beam epitaxy at growth temperature of 20–200 °C. Reflection high energy electron diffraction, x-ray diffraction, and high resolution transmission electron microscopy reveal the growth of ordered crystalline cubic MgO(001) film at ∼200 °C with MgO(001)[100] || GaAs(001)[100] and a 4 : 3 lattice registry. The surface of the MgO films, characterized by atomic force microscopy, exhibits a root mean square roughness of only 0.5 nm. In situ stress measurements reveal tensile stress as low as 1.7 GPa for a growth temperature of 200 °C in good agreement with the calculated residual misfit strain.
| Original language | English |
|---|---|
| Article number | 154511 |
| Pages (from-to) | 154511 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 114 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 21 Oct 2013 |
Fields of science
- 210006 Nanotechnology
- 103 Physics, Astronomy
- 103011 Semiconductor physics
- 103018 Materials physics
- 202032 Photovoltaics
- 103009 Solid state physics
- 103017 Magnetism
JKU Focus areas
- Engineering and Natural Sciences (in general)