Epitaxial Growth and Physical Properties of HgSe:Fe Layers and Microstructures

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings

Original language	English
Title of host publication	Proceedings of the 22nd International Conference on The Physics of Semiconductors
Pages	2557
Number of pages	1
Publication status	Published - 1995

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@inproceedings{ad22087e78124aa196c489406c0f6c6b,

title = "Epitaxial Growth and Physical Properties of HgSe:Fe Layers and Microstructures",

author = "T. Widmer and D. Schikora and G. Hendorfer and G. Machel and M. Barczewski and Wolfgang Jantsch and K. Lischka and Ortenberg, \{M. von\}",

year = "1995",

language = "English",

pages = "2557",

booktitle = "Proceedings of the 22nd International Conference on The Physics of Semiconductors",

}

TY - GEN

T1 - Epitaxial Growth and Physical Properties of HgSe:Fe Layers and Microstructures

AU - Widmer, T.

AU - Schikora, D.

AU - Hendorfer, G.

AU - Machel, G.

AU - Barczewski, M.

AU - Jantsch, Wolfgang

AU - Lischka, K.

AU - Ortenberg, M. von

PY - 1995

Y1 - 1995

M3 - Conference proceedings

SP - 2557

BT - Proceedings of the 22nd International Conference on The Physics of Semiconductors

ER -