Electronic band structure of Sb2Te3

I. Mohelsky; J. Wyzula; F. Le Mardelé; F. Abadizaman; O. Caha; A. Dubroka; X. D. Sun; C. W. Cho; B. A. Piot; M. F. Tanzim; I. Aguilera; G. Bauer; Gunther Springholz; M. Orlita

doi:10.1103/PhysRevB.109.165205

Electronic band structure of Sb2Te3

I. Mohelsky, J. Wyzula, F. Le Mardelé, F. Abadizaman, O. Caha, A. Dubroka, X. D. Sun, C. W. Cho, B. A. Piot, M. F. Tanzim, I. Aguilera, G. Bauer, Gunther Springholz, M. Orlita

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We report on Landau-level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magnetotransport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the point or along the trigonal axis, and its width reaches Eg = (190 ± 10) meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method

Original language	English
Article number	165205
Pages (from-to)	165205
Number of pages	11
Journal	Phys. Rev. B
Volume	109
DOIs	https://doi.org/10.1103/PhysRevB.109.165205
Publication status	Published - 2024

Fields of science

103 Physics, Astronomy

JKU Focus areas

Digital Transformation

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10.1103/PhysRevB.109.165205

Cite this

@article{15751264878544d695b228c87facd5a2,

title = "Electronic band structure of Sb2Te3",

abstract = "We report on Landau-level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magnetotransport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the point or along the trigonal axis, and its width reaches Eg = (190 ± 10) meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method",

author = "I. Mohelsky and J. Wyzula and {Le Mardel{\'e}}, F. and F. Abadizaman and O. Caha and A. Dubroka and Sun, {X. D.} and Cho, {C. W.} and Piot, {B. A.} and Tanzim, {M. F.} and I. Aguilera and G. Bauer and Gunther Springholz and M. Orlita",

year = "2024",

doi = "10.1103/PhysRevB.109.165205",

language = "English",

volume = "109",

pages = "165205",

journal = "Phys. Rev. B",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Electronic band structure of Sb2Te3

AU - Mohelsky, I.

AU - Wyzula, J.

AU - Le Mardelé, F.

AU - Abadizaman, F.

AU - Caha, O.

AU - Dubroka, A.

AU - Sun, X. D.

AU - Cho, C. W.

AU - Piot, B. A.

AU - Tanzim, M. F.

AU - Aguilera, I.

AU - Bauer, G.

AU - Springholz, Gunther

AU - Orlita, M.

PY - 2024

Y1 - 2024

N2 - We report on Landau-level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magnetotransport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the point or along the trigonal axis, and its width reaches Eg = (190 ± 10) meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method

AB - We report on Landau-level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magnetotransport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the point or along the trigonal axis, and its width reaches Eg = (190 ± 10) meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method

U2 - 10.1103/PhysRevB.109.165205

DO - 10.1103/PhysRevB.109.165205

M3 - Article

VL - 109

SP - 165205

JO - Phys. Rev. B

JF - Phys. Rev. B

M1 - 165205

ER -