Electroluminescence Spectra of a Gate Switched MOSFET at Cryogenic and Room Temperatures Agree with Ab Initio Calculations of 4H-SiC/SiO2-Interface Defects

To reach the theoretical performance limit of 4H-SiC MOSFETs the SiC/SiO2-interface de[1]fects along the inversion channel need to be fully identified. We employ a measurement technique that allows to observe energetically resolved trap states at the SiC/SiO2-interface by measuring the electro[1]lumiscence of a gate pulsed MOSFET. The spectra are recorded at room and cryogenic temperatures with a spectrometer and two different amplitudes of the gate pulse. Comparison of the results to lit[1]erature allows for identification of the L1 line of the D1 center with an energy of 2.9 eV and suggests donor-acceptor-pair recombination or Z1/2 to be responsible for the emission around 2.5 eV. Ioniza[1]tion energies of PbC and related vacancy centers determined via ab initio calculations show similar results as the experimental data and provide a possible classification of the trap level around 1.8 eV. © 2023 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.