Electrical study of self-assembled Ge quantum dots embedded in p-type Si. Temperature dependent Capacitance Voltage and DLTS study

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Original language	English
Title of host publication	Gettering and Defect Engineering in Semiconductor Technology XIV
Pages	67-71
Number of pages	5
Volume	178-179
Publication status	Published - 2011

Name	Sol. State Phenomena

Fields of science

@inproceedings{17bee708a98845048dd2c2021ac21fcd,

title = "Electrical study of self-assembled Ge quantum dots embedded in p-type Si. Temperature dependent Capacitance Voltage and DLTS study",

author = "\{Rangel - Kuoppa\}, \{Victor Tapio\} and Gang Chen and Wolfgang Jantsch",

year = "2011",

language = "English",

volume = "178-179",

series = "Sol. State Phenomena",

pages = "67--71",

booktitle = "Gettering and Defect Engineering in Semiconductor Technology XIV",

}

Electrical study of self-assembled Ge quantum dots embedded in p-type Si. Temperature dependent Capacitance Voltage and DLTS study. / Rangel - Kuoppa, Victor Tapio; Chen, Gang; Jantsch, Wolfgang.
Gettering and Defect Engineering in Semiconductor Technology XIV. Vol. 178-179 2011. p. 67-71 (Sol. State Phenomena).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

TY - GEN

T1 - Electrical study of self-assembled Ge quantum dots embedded in p-type Si. Temperature dependent Capacitance Voltage and DLTS study

AU - Rangel - Kuoppa, Victor Tapio

AU - Chen, Gang

AU - Jantsch, Wolfgang

PY - 2011

Y1 - 2011

M3 - Conference proceedings

VL - 178-179

T3 - Sol. State Phenomena

SP - 67

EP - 71

BT - Gettering and Defect Engineering in Semiconductor Technology XIV

ER -