Electrical and optical properties of silicon doped by Er during sublimational molecular beam epitaxy

B.A. Andreev; M.N. Drozdov; Heinz Ellmer; H. Hutter; N.G. Kalugin; Yu.A. Karpov; Z. F. Krasilnik; V.P. Kuznetsov; Leopold Palmetshofer; Kurt Piplits; R.A. Rubtsova; V.B. Shmagin; Margarita V. Stepikhova; E.A. Uskova

Electrical and optical properties of silicon doped by Er during sublimational molecular beam epitaxy

B.A. Andreev, M.N. Drozdov, Heinz Ellmer, H. Hutter, N.G. Kalugin, Yu.A. Karpov, Z. F. Krasilnik, V.P. Kuznetsov, Leopold Palmetshofer, Kurt Piplits, R.A. Rubtsova, V.B. Shmagin, Margarita V. Stepikhova, E.A. Uskova

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	392
Journal	Proceedings of the USSR Academy of Sciences
Volume	63
Publication status	Published - 1999

Fields of science

103 Physics, Astronomy
103008 Experimental physics
103020 Surface physics
103005 Atomic physics
103009 Solid state physics
103013 Ion physics
103015 Condensed matter
103017 Magnetism
103018 Materials physics
103021 Optics
103023 Polymer physics
104014 Surface chemistry
104018 Polymer chemistry
503015 Subject didactics of technical sciences
202012 Electrical measurement technology
202036 Sensor systems
203016 Measurement engineering
210001 Nanoanalytics
210004 Nanomaterials
103011 Semiconductor physics
210006 Nanotechnology
103040 Photonics
202032 Photovoltaics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Andreev, B. A., Drozdov, M. N., Ellmer, H., Hutter, H., Kalugin, N. G., Karpov, Y. A., Krasilnik, Z. F., Kuznetsov, V. P., Palmetshofer, L., Piplits, K., Rubtsova, R. A., Shmagin, V. B., Stepikhova, M. V., & Uskova, E. A. (1999). Electrical and optical properties of silicon doped by Er during sublimational molecular beam epitaxy. Proceedings of the USSR Academy of Sciences, 63, 392.

@article{8a596ff652b348cf8a302ae786740955,

title = "Electrical and optical properties of silicon doped by Er during sublimational molecular beam epitaxy",

author = "B.A. Andreev and M.N. Drozdov and Heinz Ellmer and H. Hutter and N.G. Kalugin and Yu.A. Karpov and Krasilnik, {Z. F.} and V.P. Kuznetsov and Leopold Palmetshofer and Kurt Piplits and R.A. Rubtsova and V.B. Shmagin and Stepikhova, {Margarita V.} and E.A. Uskova",

year = "1999",

language = "English",

volume = "63",

pages = "392",

journal = "Proceedings of the USSR Academy of Sciences",

}

TY - JOUR

T1 - Electrical and optical properties of silicon doped by Er during sublimational molecular beam epitaxy

AU - Andreev, B.A.

AU - Drozdov, M.N.

AU - Ellmer, Heinz

AU - Hutter, H.

AU - Kalugin, N.G.

AU - Karpov, Yu.A.

AU - Krasilnik, Z. F.

AU - Kuznetsov, V.P.

AU - Palmetshofer, Leopold

AU - Piplits, Kurt

AU - Rubtsova, R.A.

AU - Shmagin, V.B.

AU - Stepikhova, Margarita V.

AU - Uskova, E.A.

PY - 1999

Y1 - 1999

M3 - Article

VL - 63

SP - 392

JO - Proceedings of the USSR Academy of Sciences

JF - Proceedings of the USSR Academy of Sciences

ER -