Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements

G. Hobler; G. Otto; H. Hutter; K. Mayerhofer; Kurt Piplits; Leopold Palmetshofer

doi:10.1016/j.nimb.2005.08.140

Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements

G. Hobler
, G. Otto
, H. Hutter
, K. Mayerhofer
, Kurt Piplits
, Leopold Palmetshofer

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	667-669
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and
Volume	242
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.08.140
Publication status	Published - Jan 2006

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
210006 Nanotechnology
103040 Photonics
202032 Photovoltaics

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10.1016/j.nimb.2005.08.140

Cite this

@article{f4ab7002e05546e084290369708a5a0d,

title = "Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements",

author = "G. Hobler and G. Otto and H. Hutter and K. Mayerhofer and Kurt Piplits and Leopold Palmetshofer",

year = "2006",

month = jan,

doi = "10.1016/j.nimb.2005.08.140",

language = "English",

volume = "242",

pages = "667--669",

journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and",

issn = "1872-9584",

publisher = "Elsevier",

number = "1-2",

}

Hobler, G, Otto, G, Hutter, H, Mayerhofer, K, Piplits, K & Palmetshofer, L 2006, 'Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and, vol. 242, no. 1-2, pp. 667-669. https://doi.org/10.1016/j.nimb.2005.08.140

Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements. / Hobler, G.; Otto, G.; Hutter, H. et al.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and, Vol. 242, No. 1-2, 01.2006, p. 667-669.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements

AU - Hobler, G.

AU - Otto, G.

AU - Hutter, H.

AU - Mayerhofer, K.

AU - Piplits, Kurt

AU - Palmetshofer, Leopold

PY - 2006/1

Y1 - 2006/1

UR - https://www.scopus.com/pages/publications/28544442327

U2 - 10.1016/j.nimb.2005.08.140

DO - 10.1016/j.nimb.2005.08.140

M3 - Article

SN - 1872-9584

VL - 242

SP - 667

EP - 669

JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and

JF - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and

IS - 1-2

ER -

Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements

Fields of science

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