Direct Excitation Spectroscopy of Er Centers in Porous Silicon

Margarita V. Stepikhova; Wolfgang Jantsch; Gudrun Kocher; Leopold Palmetshofer; M. Schoisswohl; H. J. von Bardeleben

doi:10.1063/1.120234

Direct Excitation Spectroscopy of Er Centers in Porous Silicon

Margarita V. Stepikhova, Wolfgang Jantsch, Gudrun Kocher, Leopold Palmetshofer, M. Schoisswohl, H. J. von Bardeleben

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2975-2977
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	20
DOIs	https://doi.org/10.1063/1.120234
Publication status	Published - Nov 1997

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
210006 Nanotechnology
103040 Photonics
202032 Photovoltaics

Access to Document

10.1063/1.120234

Cite this

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title = "Direct Excitation Spectroscopy of Er Centers in Porous Silicon",

author = "Stepikhova, {Margarita V.} and Wolfgang Jantsch and Gudrun Kocher and Leopold Palmetshofer and M. Schoisswohl and {von Bardeleben}, {H. J.}",

year = "1997",

month = nov,

doi = "10.1063/1.120234",

language = "English",

volume = "71",

pages = "2975--2977",

journal = "Applied Physics Letters",

publisher = "American Institute of Physics",

number = "20",

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T1 - Direct Excitation Spectroscopy of Er Centers in Porous Silicon

AU - Stepikhova, Margarita V.

AU - Jantsch, Wolfgang

AU - Kocher, Gudrun

AU - Palmetshofer, Leopold

AU - Schoisswohl, M.

AU - von Bardeleben, H. J.

PY - 1997/11

Y1 - 1997/11

U2 - 10.1063/1.120234

DO - 10.1063/1.120234

M3 - Article

VL - 71

SP - 2975

EP - 2977

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -