Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments

Patrick Rauter, Thomas Fromherz, Nguyen Q. Vinh, B.N. Murdin, J. P. Phillips, Günther Bauer, L. Diehl, G. Dehlinger, Detlev Grützmacher, Ming Zhao, Wei-Xin Ni, C. Pidgeon

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number128
Pages (from-to)128-139
Number of pages12
JournalNew Journal of Physics
Volume9
DOIs
Publication statusPublished - 17 May 2007

Fields of science

  • 103 Physics, Astronomy
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology

Cite this