Dipole trap model for the metal-insulator transition in gated silicon-inversion layers

T. Hörmann, Gerhard Brunthaler

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number205310
Pages (from-to)205310
Number of pages13
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume82
Issue number20
DOIs
Publication statusPublished - 09 Nov 2010

Fields of science

  • 103026 Quantum optics
  • 103009 Solid state physics
  • 103 Physics, Astronomy
  • 103011 Semiconductor physics
  • 202018 Semiconductor electronics
  • 210006 Nanotechnology

JKU Focus areas

  • Engineering and Natural Sciences (in general)

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