Copper-Oxide Reduction for Low-Temperature Wafer Bonding

B. Rebhan; Sajjad Tollabimazraehno; Thomas Plach; Günter Hesser; J. Burggraf; G. Mittendorfer; V. Dragoi; M. Wimplinger; Kurt Hingerl

doi:10.1109/LTB-3D.2012.6238047

Copper-Oxide Reduction for Low-Temperature Wafer Bonding

B. Rebhan, Sajjad Tollabimazraehno, Thomas Plach, Günter Hesser, J. Burggraf, G. Mittendorfer, V. Dragoi, M. Wimplinger, Kurt Hingerl

Center for Surface and Nanoanalytics

Research output: Contribution to journal › Article › peer-review

Abstract

Silicon wafers with a 500 nm sputtered Cu layer were successfully bonded at low temperatures of 175°C for 30 min in forming gas. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) were used for oxide detection and microstructure imaging.

Original language	English
Pages (from-to)	53
Number of pages	1
Journal	IEEE Journal of Quantum Electronics
DOIs	https://doi.org/10.1109/LTB-3D.2012.6238047
Publication status	Published - Jul 2012

Fields of science

210006 Nanotechnology
103 Physics, Astronomy
103020 Surface physics
103021 Optics

JKU Focus areas

Sustainable Development: Responsible Technologies and Management

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10.1109/LTB-3D.2012.6238047

Cite this

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title = "Copper-Oxide Reduction for Low-Temperature Wafer Bonding",

abstract = "Silicon wafers with a 500 nm sputtered Cu layer were successfully bonded at low temperatures of 175°C for 30 min in forming gas. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) were used for oxide detection and microstructure imaging.",

author = "B. Rebhan and Sajjad Tollabimazraehno and Thomas Plach and G{\"u}nter Hesser and J. Burggraf and G. Mittendorfer and V. Dragoi and M. Wimplinger and Kurt Hingerl",

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doi = "10.1109/LTB-3D.2012.6238047",

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journal = "IEEE Journal of Quantum Electronics",

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T1 - Copper-Oxide Reduction for Low-Temperature Wafer Bonding

AU - Rebhan, B.

AU - Tollabimazraehno, Sajjad

AU - Plach, Thomas

AU - Hesser, Günter

AU - Burggraf, J.

AU - Mittendorfer, G.

AU - Dragoi, V.

AU - Wimplinger, M.

AU - Hingerl, Kurt

PY - 2012/7

Y1 - 2012/7

N2 - Silicon wafers with a 500 nm sputtered Cu layer were successfully bonded at low temperatures of 175°C for 30 min in forming gas. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) were used for oxide detection and microstructure imaging.

AB - Silicon wafers with a 500 nm sputtered Cu layer were successfully bonded at low temperatures of 175°C for 30 min in forming gas. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) were used for oxide detection and microstructure imaging.

UR - https://www.scopus.com/pages/publications/84864832626

U2 - 10.1109/LTB-3D.2012.6238047

DO - 10.1109/LTB-3D.2012.6238047

M3 - Article

SN - 1558-1713

SP - 53

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

ER -

Copper-Oxide Reduction for Low-Temperature Wafer Bonding

Abstract

Fields of science

JKU Focus areas

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