Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon

R. Job; W. R. Fahrner; A. I. Ivanovo; Leopold Palmetshofer; A. Ulyashin

doi:10.1557/PROC-510-425

Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon

R. Job
, W. R. Fahrner
, A. I. Ivanovo
, Leopold Palmetshofer
, A. Ulyashin

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	425-430
Number of pages	6
Journal	MRS Online Proceedings Library (OPL)
Volume	510
DOIs	https://doi.org/10.1557/PROC-510-425
Publication status	Published - 1998

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
210006 Nanotechnology
103040 Photonics
202032 Photovoltaics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1557/PROC-510-425

Cite this

@article{d2fed81995ea4133a79af04265633299,

title = "Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon",

author = "R. Job and Fahrner, \{W. R.\} and Ivanovo, \{A. I.\} and Leopold Palmetshofer and A. Ulyashin",

year = "1998",

doi = "10.1557/PROC-510-425",

language = "English",

volume = "510",

pages = "425--430",

journal = "MRS Online Proceedings Library (OPL)",

}

TY - JOUR

T1 - Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon

AU - Job, R.

AU - Fahrner, W. R.

AU - Ivanovo, A. I.

AU - Palmetshofer, Leopold

AU - Ulyashin, A.

PY - 1998

Y1 - 1998

U2 - 10.1557/PROC-510-425

DO - 10.1557/PROC-510-425

M3 - Article

VL - 510

SP - 425

EP - 430

JO - MRS Online Proceedings Library (OPL)

JF - MRS Online Proceedings Library (OPL)

ER -