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Combining four-crystal-seven-reflection and three-crystal-five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE

  • M. Heuken
  • , Ewald Koppensteiner
  • , T.W. Ryan
  • , J. Söllner

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)A35-A40
JournalJournal of Physics D: Applied Physics
Volume26
Issue number4
DOIs
Publication statusPublished - 14 Apr 1993

Fields of science

  • 103 Physics, Astronomy
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology

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