Combining four-crystal-seven-reflection and three-crystal-five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE

M. Heuken; Ewald Koppensteiner; T.W. Ryan; J. Söllner

doi:10.1088/0022-3727/26/4A/008

Combining four-crystal-seven-reflection and three-crystal-five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE

M. Heuken, Ewald Koppensteiner, T.W. Ryan, J. Söllner

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Journal of Physics D: Applied Physics
DOIs	https://doi.org/10.1088/0022-3727/26/4A/008
Publication status	Published - 1993

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

Access to Document

10.1088/0022-3727/26/4A/008

Cite this

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title = "Combining four-crystal-seven-reflection and three-crystal-five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE",

author = "M. Heuken and Ewald Koppensteiner and T.W. Ryan and J. S{\"o}llner",

year = "1993",

doi = "10.1088/0022-3727/26/4A/008",

language = "English",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd, UK",

}

TY - JOUR

T1 - Combining four-crystal-seven-reflection and three-crystal-five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE

AU - Heuken, M.

AU - Koppensteiner, Ewald

AU - Ryan, T.W.

AU - Söllner, J.

PY - 1993

Y1 - 1993

U2 - 10.1088/0022-3727/26/4A/008

DO - 10.1088/0022-3727/26/4A/008

M3 - Article

SN - 0022-3727

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

ER -