Closely spaced SiGe barns as stressor structures for strainenhancement in silicon

Nina Hrauda; Jianjun Zhang; Heiko Groiss; J. Gerharz; Tanja Etzelstorfer; Julian Stangl; Vaclav Holy; C. Deiter; O. H. Seeck; Günther Bauer

doi:10.1063/1.4789507

Closely spaced SiGe barns as stressor structures for strainenhancement in silicon

Nina Hrauda, Jianjun Zhang, Heiko Groiss, J. Gerharz, Tanja Etzelstorfer, Julian Stangl, Vaclav Holy, C. Deiter, O. H. Seeck, Günther Bauer

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 °C with average Ge contents of 30%, the Si cap layer is misfit- and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.

Original language	English
Article number	032109
Pages (from-to)	032109
Number of pages	4
Journal	Applied Physics Letters
Volume	102
Issue number	3
DOIs	https://doi.org/10.1063/1.4789507
Publication status	Published - 2013

Fields of science

103026 Quantum optics
103009 Solid state physics
103 Physics, Astronomy
103011 Semiconductor physics
202018 Semiconductor electronics
210006 Nanotechnology

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

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10.1063/1.4789507

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title = "Closely spaced SiGe barns as stressor structures for strainenhancement in silicon",

abstract = "We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 °C with average Ge contents of 30%, the Si cap layer is misfit- and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.",

author = "Nina Hrauda and Jianjun Zhang and Heiko Groiss and J. Gerharz and Tanja Etzelstorfer and Julian Stangl and Vaclav Holy and C. Deiter and Seeck, {O. H.} and G{\"u}nther Bauer",

year = "2013",

doi = "10.1063/1.4789507",

language = "English",

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pages = "032109",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Closely spaced SiGe barns as stressor structures for strainenhancement in silicon

AU - Hrauda, Nina

AU - Zhang, Jianjun

AU - Groiss, Heiko

AU - Gerharz, J.

AU - Etzelstorfer, Tanja

AU - Stangl, Julian

AU - Holy, Vaclav

AU - Deiter, C.

AU - Seeck, O. H.

AU - Bauer, Günther

PY - 2013

Y1 - 2013

N2 - We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 °C with average Ge contents of 30%, the Si cap layer is misfit- and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.

AB - We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 °C with average Ge contents of 30%, the Si cap layer is misfit- and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.

UR - http://apl.aip.org/resource/1/applab/v102/i3/p032109_s1

U2 - 10.1063/1.4789507

DO - 10.1063/1.4789507

M3 - Article

SN - 0003-6951

VL - 102

SP - 032109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032109

ER -

Closely spaced SiGe barns as stressor structures for strainenhancement in silicon

Abstract

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